Full Custom Memory Design Interview Questions

1. Explain the difference between Planar and FIN-FET technology ?

2. Explain pros and cons of gate length scales down ?

3. What is process variation ?

4. As a design engineer how you handle process variations ?

5. What is PPA ?

6. Explain Monte Carlo analysis ?

7. What are the high sigma tools you have used ?

8. What is PVT ?

9. Explain 6T bit cell read and write ?

10. What is the worst corner for bit cell write and why ?

11. What is the worst corner for bit cell read and why ?

12. What is critical path modeling ?

13. Explain complete signal flow of write and read of memory ?

14. Why you need pre-charge in memory ?

15. What is column muxing ? Why it is used ?

16. What is read margin ?

17. Explain the signal flow of read margin ?

18. What is write margin and Explain the signal flow ?

19. What are power margins ?

20. What is setup time ?

21. Explain setup time in memory prospective ? How you calculate ?

22. What is hold time ? How you calculate in memory ?

23. What is access time ?

24. What is cycle time ?

25. Explain recovery time ?

26. What is LIB ? What it contains ?

27. How you characterize ?

28. What are the different types of input vectors for worst case ?

29. How you validate the LIB data ?

30. What is self timed memory ?

31. Explain self timing scheme ?

32. Explain decoding scheme ?

33. What is SAMP ?

34. Explain design and working of SAMP ?

35. How you decide offset for SAMP ?

36. Explain about SAMP analysis you did ?

37. Why PMOS is used in read mux ? Why not PMOS ?

38. What are different read assist techniques ?

39. How you find out read assist is needed ?

40. Explain about write assist techniques ?

41. How you find out write assist is needed ? or is it by default feature ?

42. Explain about NBL and TVC in brief  ?